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1200V CoolSiC™ MOSFET: High Performance Complemented by High Reliability


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Silicon Carbide (SiC) switches become increasingly more important for differentiation of power converters in size, weight and/or efficiency. The dedicated material properties of SiC enable the design of minority carrier-free unipolar devices instead of the charge modulated IGBT devices. As such, they deliver the highest efficiency, higher switching frequencies, reduced heat dissipation and space savings – benefits that, in turn, also lead to overall lower cost.


This is a companion discussion topic for the original entry at https://eepower.com/semiconductors/1200v-coolsic-mosfet-high-performance-complemented-high-reliability-infineon