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A Reverse Conducting IGCT Optimized for Medium Switching Frequency Applications


With the introduction of its latest Reverse-Conducting Integrated Gate Commuted Thyristors platform (RC-IGCT), ABB sets a new benchmark in high power semiconductor device performance. The initial RC-IGCT release is a 4500 V, 3600 A device. Available in variants optimized for medium switching frequency applications found with 3-level topologies, and for low switching frequency used in Multi-Level Modular Converters (MMC). The repetitive turn-OFF current of 3600 A is a record value in its class.

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