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Advanced Si-IGBT Chip Design for Maximum Overall System Performance


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The overall system performance is undoubtedly influenced to a significant extent by the choice of the power semiconductor technology employed. For conventional IGBT modules, the recent improvements in the VCEsat vs. Eoff trade-off show a tendency towards saturation and hence the performance improvement of upcoming IGBT chip generations do not indicate a significant step in efficiency improvements anymore. With the new G1- IPM series it is possible to obtain substantial system efficiency improvement by utilizing an advanced Si-IGBT chip and implementing an adaptive gate control.


This is a companion discussion topic for the original entry at https://eepower.com/semiconductors/advanced-si-igbt-chip-design-maximum-overall-system-performance-mitsubishi-electric