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Current Progress at Si IGBTs in the Voltage Range up to 1200V


In recent years the basic features introduced at the turn of the millennium for IGBTs such as trench gate cell and field stop layers could be enhanced. Progress in the manufacturing processes enabled reduced cell pitch for trench IGBTs leading to significantly lower on-state losses and improved switching behaviour. At the same time boundary conditions from the applications became clearly visible as hurdles for the further improvement even of silicon-based power switches and for reducing losses.

This is a companion discussion topic for the original entry at