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GaN Makes a Frontal Attack on Silicon Power MOSFETs


Silicon has been around long enough. It’s time for a younger and a far more fit semiconductor to take over. When I first started developing power devices 44 years ago, the “king of the hill” was the silicon power bipolar transistor. In 1978 International Rectifier (IRF) launched power MOSFETs as a faster alternative to the slower and aging bipolar devices. The early adopters of the power MOSFET were applications where the bipolar just was not fast enough. The signature example for its adoption was the switching power supply for the desktop computer; first at Apple, and then at IBM.

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