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Gate Drivers for SiCMOSFET/IGBT Power Modules and Their Advantages


In order to meet new requirements for miniaturization, low-loss, and high reliability of power converters, power semiconductors manufacturers are constantly trying to improve SiC MOSFET and IGBT technologies. Finding the best compromise to progress on all these characteristics is problematic, because they are antithetical, therefore the innovation pace is slow. SiC MOSFET and IGBT performances are not only dependent on improvement made on high-power transistors but also on all the components around them.

This is a companion discussion topic for the original entry at