Since years, Mitsubishi Electric is well-known for its high-current SiC Power Modules, available in different voltage classes. For 1200 V and 1700 V, the second generation SiC Power Modules is released now. Compared to the first generation, the performance has been improved and a wider line-up will be available. As one promising technology for 3300 V and 6500 V SiC Power Modules, Mitsubishi Electric is embedding the Schottky diode into the MOSFET chip. For this cutting-edge technology, latest research results are presented.
This is a companion discussion topic for the original entry at https://eepower.com/semiconductors/next-generation-sic-power-modules-mitsubishi-electric-europe-bv-mitsubishi-electric